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Download Advances in Electronic Circuit Packaging: Volume 5 by George R. Dallimore (auth.), Lawrence L. Rosine (eds.) PDF

By George R. Dallimore (auth.), Lawrence L. Rosine (eds.)

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Read or Download Advances in Electronic Circuit Packaging: Volume 5 Proceedings of the Fifth International Electronic Circuit Packaging Symposium sponsored by the University of Colorado, EDN (Electrical Design News), and Design News, held at Boulder, Colorado, August 19–2 PDF

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Extra resources for Advances in Electronic Circuit Packaging: Volume 5 Proceedings of the Fifth International Electronic Circuit Packaging Symposium sponsored by the University of Colorado, EDN (Electrical Design News), and Design News, held at Boulder, Colorado, August 19–2

Sample text

Mln. materials Fig. 1. Determination of packaging philosophy and configuration. The horizontal axis of Fig. 1 is a continuum of packaging concepts for a given system having, on the one hand, an ideal engineering package with maximum heat transfer, mechanical strength, and electrical circuit properties. This package may be impossible to fabricate. On the other hand, it is the ideal manufacturing package which can be assembled by untrained operators using no tooling or equipment and minimum cost raw materials.

The choice of the objective lens to be used with the curved faceplate EIO tube provides two challenges: (1) optimizing performance ofthe lens because ofthe sharply curved faceplate; and (2) reducing the cost of the lens for this application since it is a "one of a kind" item. Fig. 13. (a) H and V sweep card, showing three simulated welded-wire matrices with components ; (b) bottarn view of card, showing underside of simulated weldedwire matrix. 38 Edmund C. Decker (a) (b) F ig. 14. (a) Partial illustratio n of standard welded-wire matrix; (b) Standard welded-wire matrix.

3. Typical NAND and NOR gates. -= device, the transistor is altemately cut off and saturated. When cut off, very Iittle heat is generated, because of the low leakage current ftowing through the junction. When saturated, the resistance of the junction is so low that practically no voltage is developed across it to cause apower loss. Class A operation oftransistors results in the dissipation ofpower in the transistor junction. This is because the transistor is operating essentially as a variable resistor rather than as a switch.

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