By Rohit Sharma
This publication offers a accomplished review of characterization thoughts and complicated modeling of VLSI circuits for contemporary and complicated method nodes. meant viewers contains study execs, graduate scholars, circuit and PDK designers, characterization engineers, CAD builders, managers, mentors, and the purely curious. it really is equipped to function a compendium to a newbie, a prepared connection with intermediate and resource for knowledgeable at the themes pointed out inside of.
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Additional resources for Characterization and Modeling of Digital Circuits
Pdf, Jan. 1983. Fairchild Semiconductor Application Note 77.  N. H. E. Weste and K. Eshraghian, Principles of CMOS VLSI Design: A Systems Perspective. , 1993.  J. M. Rabaey, A. Chandrakasan, and B. Nikolic, Digital Integrated Circuits. , 2003.  A. S. Sedra and K. C. Smith, Microelectronic Circuits. , 2008.  R. Dennard, V. Rideout, E. Bassous, and A. LeBlanc, “Design of ionimplanted MOSFET’s with very small physical dimensions,” IEEE Journal of Solid-State Circuits, vol. 20, pp. 256–268, Oct.
Doczy, B. Doyle, J. Kavalieros, and M. Metz, “High-κ/metal-gate stack and its MOSFET characteristics,” IEEE Electron Device Letters, vol. 25, pp. 408–410, June 2004.  S. Datta, “Recent advances in high performance CMOS transistors: From planar to non-planar,” The Electrochemical Society Interface, vol. 22, pp. 41–46, 2013.  S. Sinha, B. Cline, G. Yeric, V. Chandra, and Y. Cao, “Design benchmarking to 7 nm with FinFET predictive technology models,” in Proceedings of the 2012 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED ’12, (New York, NY, USA), pp.
Therefore, rigorous quantum transport formalism, like the nonequilibrium Green’s function (NEGF), are important for simulating TFETs especially at small device dimensions. Various researchers have employed rigorous quantum treatment to compute the tunneling current in TFETs [7–19]. However, full quantum treatment is computationally expensive, especially for 2-D and 3-D structures. Therefore, tunneling models in TCAD simulators that work semi-classically using a drift-diffusion mechanism are widely employed and often give acceptable results.