By Tim David Germann
Semiconductor heterostructures characterize the spine for an expanding number of digital and photonic units, for purposes together with info garage, communique and fabric therapy, to call yet a number of. Novel structural and fabric options are wanted to be able to additional push the functionality limits of current units and to open up new program parts.
This thesis demonstrates how key functionality features of 3 different kinds of semiconductor lasers might be adapted utilizing shrewdpermanent nanostructure layout and epitaxial development ideas. All points of laser fabrication are mentioned, from layout and progress of nanostructures utilizing metal-organic vapor-phase epitaxy, to fabrication and characterization of entire devices.
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Additional info for Design and Realization of Novel GaAs Based Laser Concepts
By D. Bimberg. Semiconductor Nanostructures (Springer, Berlin, 2008). ISBN 978-3-540-77898-1 19. C. Casey, Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers. J. Appl. Phys. 44(3), 1281 (1973). ISSN 00218979 Chapter 4 MOVPE Processes This chapter discusses the influence of individual QD growth parameters and stacking challenges, along with the material quality and doping levels used for laser device growth. For these investigations numerous test samples are grown on a commercially available Aixtron 200/4 MOVPE system.
QD Composition The nominal composition of the QD material itself has only a minor influence on the final QD composition and on the maximal QD emission wavelength (cf. Figs. 14). This can be explained by indium redistribution during the QD formation process. While the indium concentration within the QDs increases, the surrounding material exhibits a reduced indium concentration . ] RT QD growth temperature 530 °C 520 °C 510 °C OD0: 5 kW/cm 2 and OD3: 5 W/cm 2 800 900 1000 1100 1200 Wavelength [nm] 1300 1400 Fig.
The most important test sample design is the PL test structure, which is discussed in the following subsection. 3. PL Test Structures The goal of the test structure design for PL measurements is to allow for direct comparison of results independently of active medium type or the number of active layers within the structure. For simple PL measurements it is sufficient to integrate an active layer into an absorbing matrix crystal. This allows for the generation of charge carriers, which can diffuse to the active layer and relax into the energetically lower confined states.