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Download SOC Design Methodologies: IFIP TC10 / WG10.5 Eleventh by P. Lamaty, B. Mazar, D. Demigny, L. Kessal, M. Karabernou PDF

By P. Lamaty, B. Mazar, D. Demigny, L. Kessal, M. Karabernou (auth.), Prof. Michel Robert, Prof. Bruno Rouzeyre, Prof. Christian Piguet, Dr. Marie-Lise Flottes (eds.)

The eleven th IFIP foreign convention on Very huge Scale Integration, in Montpellier, France, December 3-5,2001, was once an exceptional good fortune. the main target was once approximately IP Cores, Circuits and procedure Designs & purposes in addition to SOC layout equipment and CAD. This booklet includes the simplest papers (39 between 70) which were offered through the convention. these papers care for all points of significance for the layout of the present and destiny built-in platforms. procedure on Chip (SOC) layout is this day a huge problem for designers, as a SOC could comprise very various blocks, similar to microcontrollers, DSPs, thoughts together with embedded DRAM, analog, FPGA, RF front-ends for instant communications and built-in sensors. the whole layout of such chips, in very deep submicron applied sciences right down to 0.13 mm, with numerous thousands of hundreds of thousands of transistors, provided at lower than 1 Volt, is a truly not easy activity if layout, verification, debug and commercial try out are thought of. The microelectronic revolution is attention-grabbing; fifty five years in the past, in past due 1947, the transistor was once invented, and everyone understands that it was once through William Shockley, John Bardeen and Walter H. Brattein, Bell mobile Laboratories, which acquired the Nobel Prize in Physics in 1956. most likely, everyone thinks that it was once well-known instantly as an incredible invention.

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SOC Design Methodologies: IFIP TC10 / WG10.5 Eleventh International Conference on Very Large Scale Integration of Systems-on-Chip (VLSI-SOC’01) December 3–5, 2001, Montpellier, France

The eleven th IFIP foreign convention on Very huge Scale Integration, in Montpellier, France, December 3-5,2001, was once a good luck. the focus used to be approximately IP Cores, Circuits and method Designs & functions in addition to SOC layout tools and CAD. This booklet comprises the simplest papers (39 between 70) which have been offered throughout the convention.

Extra resources for SOC Design Methodologies: IFIP TC10 / WG10.5 Eleventh International Conference on Very Large Scale Integration of Systems-on-Chip (VLSI-SOC’01) December 3–5, 2001, Montpellier, France

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Ouput dynamic for (a) normal (b) over exposed (c) under exposed scene - (d) Trimming procedure for Vpol and Texp 36 E. Senn, E. Martin Exp is high during time Texp. Texp is somewhat like a camera's exposure time. Along with Vpol, it allows for trimming the sensor's output dynamic. Indeed, transistor Ml converts v2 to iD. Since v2 equals Vpol minus vI, iD's output range actually depends on Vpol. As shown on Figure J0, the sensor's output dynamic is maximal only if the image has good contrast. It is poor if the scene is too bright or too dark.

It is coded with: 3 M + 3 + log2(w+ -) 2 bits (17) It is impossible to size an integrator with a reasoning starting from input and progressing towards output. One must proceed from output towards input. Because the global amplification is one, the y result on figure 3 as an integer part coded with M bits. Demigny, L Kessal, J. Pons 48 Because the static amplification of the last adder is 2, the output of the last integrator uses one bit less than (18). An integrator with input u and output v computes: (19) Inverting this equation leads to: (20) The input of an integrator uses one more bit than its output (worst case).

Then Preb is high and Cout is decharged across M2 while Exp is high. Vout final value is linear with In(iL) (see Figure 9). When Exp is A vision system on chip for industrial control 35 toggled high, charge sharing induces a parasitic current from Exp, via M2 and MI, to MI's gate. For very low iL, this current increases v2 during exposure time, and finally leads to bad output values. tm. a) b) Figure 8. (a) The pixel cell's structure: photo-diode and response "linearization" - (b) The pixel's layout _100(1lj1 v....

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